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feb ruary 2016 docid026838 rev 3 1 / 15 this is information on a product in full production. www.st.com STP100N8F6 n - channel 80 v, 0.008 typ., 100 a, stripfet? f6 power mosfet in a to - 220 package datasheet - production data figure 1: internal schematic diagram features order code v ds r ds(on)max. i d p tot STP100N8F6 80 v 0.009 ? 100 a 176 w ? very low on -resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is an n-channel power mosfet developed using the stripfet? f6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking package packing STP100N8F6 100n8f6 to - 220 tube
contents STP100N8F6 2 / 15 docid026838 rev 3 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 5 3 test circuits ..................................................................................... 8 4 package information ....................................................................... 9 4.1 to -220 type a package information ................................................ 10 4 .2 to -220 type h package information ............................................... 12 5 r evision history ............................................................................ 14
STP100N8F6 electrical ratings docid026838 rev 3 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 80 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c 100 a i d drain current (continuous) at t c = 100 c 70 a i dm (1) drain current (pulsed) 400 a p tot total dissipation at t c = 25 c 176 w e as (2) single pulse avalanche energy 170 mj t j operating junction temperature range - 55 to 175 c t stg storage temperature range c notes: (1) pulse width is limited by safe operating area. (2) starting t j = 25 c, i d = 25 a, v dd = 40 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max. 0.85 c/w r thj - amb thermal resistance junction - ambient max. 62.5 c/w
electrical characteristics STP100N8F6 4 / 15 docid026838 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off-states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 250 a 80 v i dss zero - gate voltage drain current v gs = 0, v ds = 80 v 1 a v gs = 0, v ds = 80 v, t c = 125 c 100 a i gss gate - body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 50 a 0.008 0.009 ? table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f = 1 mhz - 5955 - pf c oss output capacitance - 244 - pf c rss reverse transfer capacitance - 160 - pf q g total gate charge v dd = 40 v, i d = 100 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 100 - nc q gs gate - source charge - 30 - nc q gd gate - drain charge - 25 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 40 v, i d = 50 a, r g = 4.7 ?, v gs = 10 v (see figure 13: "test circuit for resistive load switching times" and figure 18: "switching time waveform" ) - 33 - ns t r rise time - 46 - ns t d(off) turn - off delay time - 103 - ns t f fall time - 21 - ns
STP100N8F6 electrical characteristics docid026838 rev 3 5 / 15 table 7: source-drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage v gs = 0, i sd = 100 a - 1.2 v t rr reverse recovery time i sd = 100 a, di/dt = 100 a/s v dd = 64 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 38 ns q rr reverse recovery charge - 63 nc i rrm reverse recovery current - 3.3 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STP100N8F6 6 / 15 docid026838 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : normalized gate threshold voltage vs. temperature figure 7 : normalized v (br)dss vs. temperature
STP100N8F6 electrical characteristics docid026838 rev 3 7 / 15 figure 8 : static drain - source on - resistance figure 9 : normalized on - resistance vs. temperature figure 10 : gate charge vs. gate - source voltage figure 11 : capacitance variations figure 12 : source - drain diode forward characteris tics
test circuits STP100N8F6 8 / 15 docid026838 rev 3 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
STP100N8F6 package information docid026838 rev 3 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STP100N8F6 10 / 15 docid026838 rev 3 4.1 to -220 type a package information figure 19 : to-220 type a package outline
STP100N8F6 package information docid026838 rev 3 11 / 15 table 8: to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
package information STP100N8F6 12 / 15 docid026838 rev 3 4.2 to -220 type h package information figure 20 : to-220 type h package outline
STP100N8F6 package information docid026838 rev 3 13 / 15 table 9: to-220 type h package mechanical data dim. mm min. typ. max. a 4.40 4.45 4.50 a1 1.22 1.32 a2 2.49 2.59 2.69 a3 1.17 1.27 1.37 b 0.78 0.87 b2 1.25 1.34 b4 1.20 1.29 b6 1.50 b7 1.45 c 0.49 0.56 d 15.40 15.50 15.60 d1 9.05 9.15 9.25 e 10.08 10.18 10.28 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 h1 6.25 6.35 6.45 l 13.20 13.40 13.60 l1 3.50 3.70 3.90 l2 16.30 16.40 16.50 l3 28.70 28.90 29.10 ? p 3.75 3.80 3.85 q 2.70 2.80 2.90
revision history STP100N8F6 14 / 15 docid026838 rev 3 5 revision history table 10: document revision history date revision changes 02 - sep - 2014 1 initial release. 02 - dec - 2014 2 document status promoted from preliminary to production data. added the section of electrical characteristics (curves). minor text changes. 08 - feb - 2016 3 added section 4.2: "to - 220 type h package information" .
STP100N8F6 docid026838 rev 3 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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